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Excitons of the Structure in Zinc-Blende InxGa1-xN and their Properties

Published online by Cambridge University Press:  11 February 2011

Dimiter Alexandrov
Dimiter Alexandrov*
Affiliation:
Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, Ontario P7B 5E1, Canada
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Abstract

The existence of excitons of the structure in zinc-blende InxGa1-xN is reported in this paper. The LCAO electron band structure of zinc-blende InxGa1-xN is calculated as function of both the electron wave vector and the electron radius-vector. The observed optical absorption edge in In-rich regions in InxGa1-xN is explained on the basis of this electron band structure. The excitons of the structure are found on the basis of the electron band structure of zinc-blende InxGa1-xN. The binding energy and the hydrogen like energy levels of these excitons are determined. It is found that these excitons are localized. The observed photoluminescence spectrum in In-rich regions of InxGa1-xN is explained by the excitons of the structure. It is found that destroying of these excitons occurs in their interactions with hetero-junction and that the electrons and the holes of exciton origin penetrate in the semiconductor of wider energy band gap. This phenomenon is used for explanation of the observed spectral blue shift of the electroluminescence in the quantum well structures on InxGa1-xN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.11
Copyright
Copyright © Materials Research Society 2003

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References

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