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Excitonic Mechanism of Rare Earth Excitation in II-VI and IH-V Semiconductors

Published online by Cambridge University Press:  03 September 2012

Marek Godlewski
Marek Godlewski*
Affiliation:
Institute of Physics, Polish Academy of Sciences 02–668 Warsaw, Al. Lotników 32/46, Poland
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Abstract

In this paper we analyze processes which may improve the efficiency of low- and high- field electroluminescence devices based on rare earth doped II-VI and III-V semiconductors. The main topicsare the processes which follow impact ionization, i.e., carrier trapping and/or exciton binding. Excitonic excitation mechanism is shown to occur also for ions which are not directly ionized, as observed recently for some rare earth impurities in II-VI and III-V semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 513
Copyright
Copyright © Materials Research Society 1992

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References

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