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Exciton Transitions in Narrow GaAs/AlxGal-x As Quantum Wells

Published online by Cambridge University Press:  21 February 2011

O. L. Russo ,
V. Rehn ,
T. W. Nee ,
T. L. Cole ,
W. M. Theis  and
C. Schwartz
O. L. Russo
Affiliation:
New Jersey Institute of Technology, Department of Physics, Newark, NJ 07102
V. Rehn
Affiliation:
Michelson Laboratory, China Lake, CA 93555
T. W. Nee
Affiliation:
Michelson Laboratory, China Lake, CA 93555
T. L. Cole
Affiliation:
Michelson Laboratory, China Lake, CA 93555
W. M. Theis
Affiliation:
Michelson Laboratory, China Lake, CA 93555
C. Schwartz
Affiliation:
Michelson Laboratory, China Lake, CA 93555
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Abstract

Electroreflectance (ER) measurements were made on GaAs/AxGal-x As coupled quantum wells at room temperature and at 77K. The close coupling of the narrow (28.3 A) barriers resulted in splitting of the hole and electron subband levels which was observed at both temperatures. As a first approximation, the confining potential was assumed to be due to the barrier alone; electric field effects of the modulating potential and trapped interfacial charge were considered to be negligible. The dominant heavy holeconduction and light hole-conduction transitions observed at 300K were at 1523meV and 1539 meV respectively, although other weaker transitions were also resolved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 69
Copyright
Copyright © Materials Research Society 1992

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References

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