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Exciton Magnetoluminescence Studies in Ordered and Disordered In0.48Ga0.52P Semiconductor Alloys

Published online by Cambridge University Press:  25 February 2011

E. D. Jones ,
D. M. Follstaedt ,
S. K. Lyo  and
R. P. Schneider Jr
E. D. Jones
Affiliation:
Sandia National Laboratories, Albuquerque, NM
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM
S. K. Lyo
Affiliation:
Sandia National Laboratories, Albuquerque, NM
R. P. Schneider Jr
Affiliation:
Sandia National Laboratories, Albuquerque, NM
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Abstract

We report the observation of magnetic-field dependent excitonic photoluminescence energies and linewidths in ordered and disordered In0.48Ga0.52P alloys (lattice matched to GaAs). The photoluminescence measurements were made at 1.4 K and the applied magnetic field ranged between 0 and 13.6 tesla. With increasing magnetic fields, we observe increasing photoluminescence linewidths for disordered alloys and decreasing photoluminescence linewidths for the ordered alloys. The magnetic field dependence of the photoluminescence peak-energy shifts for all samples (ordered and disordered) is in good agreement with theoretical considerations. The presence of CuPt-type ordering was confirmed by transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 61
Copyright
Copyright © Materials Research Society 1993

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References

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