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Excimer Laser-Assisted Movpe of Cdte on Gaas (100): Crystal Growth and Mechanisms

Published online by Cambridge University Press:  26 February 2011

J.J. Zinck ,
P.D. Brewer ,
J.E. Jensen ,
G.L. Olson  and
L.W. Tutt
J.J. Zinck
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
P.D. Brewer
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J.E. Jensen
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
L.W. Tutt
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
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Abstract

Excimer laser-assisted MOVPE has been used to deposit thin films of CdTe (111) on GaAs (100) substrates. Auger spectroscopy indicates that the films are stoichiometric and that carbon and oxygen contamination are below the levels of detectability. Good crystalline quality of the layers is confirmed by x-ray diffractometry. Growth rates up to 2 /μm/hr have been recorded in real time using time-resolved reflectivity. The CdTe growth rate is found to have a linear dependence on reactant partial pressure and laser average power, but was independent of substrate temperature in the range of 150° C to 300* C. Laser-induced fluorescence spectroscopy has been used to determine that photolysis of diethyltellurium at 248 nm is a one photon process which produces ground state Te atoms. The flux of reactive species to the substrate surface has been probed by mass spectrometry. Evidence for the generation of monoethyltelluride, either by recombination or direct photolysis, is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 319
Copyright
Copyright © Materials Research Society 1998

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References

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