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Excimer Laser Melting of MBE-ZnSe

Published online by Cambridge University Press:  25 February 2011

Nallan C. Padmapani ,
G. -J. Yi ,
G. F. Neumark ,
Z. Lu ,
C. C. Chang  and
M. C. Tamaargo
Nallan C. Padmapani
Affiliation:
Henry Krumb School of Mines, Columbia University, New York, NY, 10027.
G. -J. Yi
Affiliation:
Henry Krumb School of Mines, Columbia University, New York, NY, 10027.
G. F. Neumark
Affiliation:
Henry Krumb School of Mines, Columbia University, New York, NY, 10027.
Z. Lu
Affiliation:
Electrical Engineering Department, Columbia University, New York, NY, 10027.
C. C. Chang
Affiliation:
Bellcore, Redbank, NJ.
M. C. Tamaargo
Affiliation:
Bellcore, Redbank, NJ.
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Abstract

It has. generally been concluded that good doping in wide-gap semiconductors is best accomplished by non-equilibrium means. Excimer lasers, because of their high intensity and short pulses, are ideal for this. Our earlier laser annealing work on bulk ZnSe resulted in complications due to increased twinning of the sample. Our present work shows that twinning can be eliminated by the use of originally untwinned MBE material. The MBE samples had the additional advantage, over bulk, of a far smoother surface, which simplified the investigation of melting and evaporation. Use of power levels of 10, 20, and 35 MW/cm2 showed no melting at 10 MW/cm2, melting and no detectable evaporation at 20 MW/cm2, and evaporation at 35 MW/cm2. Combined ion beam cratering and SEM examination showed a depth of the melted layer, at 20 MW/cm2, of - 0.5 μm. Moreover, AES analysis showed minimal decomposition of the 20 MW/cm2 sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 255
Copyright
Copyright © Materials Research Society 1992

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References

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