Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:02:02.385Z Has data issue: false hasContentIssue false
  • English
  • Français

Excimer Laser Induced Micron-Size Pattern Etching By Image Projection

Published online by Cambridge University Press:  26 February 2011

James H. Brannon
James H. Brannon*
Affiliation:
IBM East Fishkill Development Laboratory, Route 52, Z-340, Hopewell Jet., NY 12533
Get access

Abstract

Patterned fine-line features as small as 0.8 microns have been etched in polyimide, silicon, and copper by use of ablative and chemical techniques. KrF excimer laser pattern etching was accomplished by use of a Kohler-type projection system employing a Uv refracting microscope objective. Ablative etching of polyimide was accomplished in air, while silicon and copper were chemically etched using the vapor of chlorine or carbon tetrachloride.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 27
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Pol, V., Solid State Technology 30(1), 71 (1987).Google Scholar
2 Dubroeucq, G. M. and Zahorsky, D. in “Microcircuit Engineering BE,” Proc. International Conf. Microliithography, Oct. 5–8, 1982, Grenoble, France, pp. 73-78.Google Scholar
3 Ehrlich, D. J., Tsao, J. Y., and Bozler, C. O., J. Vac. Sci. Technol. B 3(1), 1 (1985).Google Scholar
4 Loper, G. L. and Tabat, M. D. in Manufacturing Applications of Lasers, edited by Allen, S. D., SPIE Vol. 621, pp. B7–90 (1986).Google Scholar
5 Hayasaka, N., Nakahara, H., Okano, H., and Horiike, Y., Appl. Phys. Lett. 51(17), 1328 (1987).Google Scholar
6 Brannon, J. et al. , J. Appl. Phys. 58(5), 2036 (1985).Google Scholar
7 The melting threshold of 650 mJ/cmS assumes large area irradiation and one dimensional heat flow. Silicon melting in micron-size irradiated regions, where 2 and 3 dimensional heat flow can occur, will likely require a higher fluence.Google Scholar
8 Treyz, G. V., Beach, R., and Osgood, R. M., Appl. Phys. Lett. 50(8), 475 (1987).Google Scholar
9 Kullmer, R. and Bauerle, D., Appl. Phys. A 43, 227 (1987).Google Scholar
10 Sesselmann, W., Marinero, E. E., and Chuang, T. J., Appl. Phys. A 41, 209 (1986).Google Scholar