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Excimer Laser Deposition of HighlY Oriented PLZT Thin Films

Published online by Cambridge University Press:  16 February 2011

G.A. Petersen ,
L.C. Zou ,
W.M. Van Buren ,
L.L. Boyer  and
J.R. Mcneil
G.A. Petersen
Affiliation:
University of New Mexico, Center for High Technology Materials, EECE Building, Albuquerque, NM. 87131
L.C. Zou
Affiliation:
University of New Mexico, Center for High Technology Materials, EECE Building, Albuquerque, NM. 87131
W.M. Van Buren
Affiliation:
University of New Mexico, Center for High Technology Materials, EECE Building, Albuquerque, NM. 87131
L.L. Boyer
Affiliation:
University of New Mexico, Center for High Technology Materials, EECE Building, Albuquerque, NM. 87131
J.R. Mcneil
Affiliation:
University of New Mexico, Center for High Technology Materials, EECE Building, Albuquerque, NM. 87131
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Abstract

Laser ablation provides a suitable technique of ferroelectric thin film deposition. We have used this technique to produce films of Pb1−xLax(Zr1−y Tiy)1−x/4O3 (PLZT), a class of ceramic materials which has a wide range of composition dependent electro-optical properties. PLZT films of (7/0/100) and (28/0/100) composition have been deposited onto both crystalline Si <100> and amorphous fused silica substrates. Laser ablation provides high deposition rates and good crystal structure of thin ferroelectric films on silicon. The methods required to achieve proper stoichiometry in the films are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 127
Copyright
Copyright © Materials Research Society 1990

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References

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