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Exchange of Bonded Hydrogen in Amorphous Silicon by Deuterium
Published online by Cambridge University Press: 26 February 2011
Abstract
We show that bonded hydrogen in a-Si:H is readily exchanged by atomic deuterium when exposed to a deuterium plasma discharge. The effective diffusion coefficient for the D.H exchange, 10∼14 cnr/sec at 160°C, is comparable to that of interstitial hydrogen in c-Si.
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- Copyright © Materials Research Society 1987
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