Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T07:39:33.387Z Has data issue: false hasContentIssue false

Exchange Anisotropy in Amorphous/Microcrystalline Co-Gd Films

Published online by Cambridge University Press:  03 September 2012

A. M. Toxen
Affiliation:
Stanford Univ., Stanford, CA 94305-4045
A. Hopkins
Affiliation:
Stanford Univ., Stanford, CA 94305-4045
S. B. Hagstrom
Affiliation:
Stanford Univ., Stanford, CA 94305-4045
R. M. White
Affiliation:
Control Data Corp., Minneapolis, MN 55440
Get access

Abstract

Magnetization, TEM, and x-ray diffraction studies have been carried out on GdCox films sputtered onto Si or sapphire substrates at ˜90 C, ambient temperature. The composition range studied was x=2−8.5. Over the composition range defined approximately by 5>×>3, the films, which are 1–3 microns thick, exhibit a unidirectionally displaced B-H loop, characteristic of an exchange-biased phase. TEM studies indicated that the samples with the shifted loops indeed consist of a mixture of amorphous and microcrystalline phases. The characteristic size of the microstructure is 10–20 A. Electron diffraction shows a very broad ring characteristic of amorphous phase together with six or seven sharper rings characteristic of crystalline material which index best to the hexagonal GdCo5 structure or to a high temperature hexagonal Gd2Co17 phase. The diffraction pattern remains virtually unchanged over the composition range x=2–8. This leads us to conclude that the microcrystalline material consists of one, or perhaps more than one, metastable phase over the indicated composition range. X-ray diffraction shows only one broad maximum.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Toxen, A.M., Geballe, T.H. and White, R.M., J. Appl. Phys. 64, 5431 (1988).CrossRefGoogle Scholar
2. Webb, D.J., Marshall, A.F., Toxen, A.M., Geballe, T.H., and White, R.M., IEEE Trans. Magn. 24, 2013 (1988).Google Scholar
3. Buschow, K.H.J. and Goot, A.S. Van Der, J. Less-Common Metals, 17,249 (1969).Google Scholar
4. Burzo, E., Int. J. Magn. 3, 161 (1972).Google Scholar