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Excess Conductance of MOS Diodes Suffered Current Stress and Elucidation of Induced Interface States

Published online by Cambridge University Press:  22 February 2011

Masao Inoue  and
Junji Shirafuji
Masao Inoue
Affiliation:
Osaka University, Department of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka, 565, Japan
Junji Shirafuji
Affiliation:
Osaka University, Department of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka, 565, Japan
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Abstract

The ac conductance-voltage (G–V) characteristics at various frequencies have been measured in MOS diodes which suffered constant current stress by Fowler–Nordheim (F–N) electron injection from Si substrate.It is found that a double-peak structure appears in G–V curve and grows continuously with proceeded current stress.The growth of two kinds of interface states is elucidated after subtracting the effect of oxide capacitance and substrate resistance by a simple equivalent circuit analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 69
Copyright
Copyright © Materials Research Society 1994

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References

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