Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T01:38:01.754Z Has data issue: false hasContentIssue false
  • English
  • Français

Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution DepositionΨ

Published online by Cambridge University Press:  01 February 2011

Sushil Kumar Singh  and
Hiroshi Ishiwara
Sushil Kumar Singh
Affiliation:
[email protected], Tokyo Institute of Technology, Interdisciplinary Graduate school of Science and Engineering, 4259-J2-67 Nagatsuda, Midori-ku, Yokohama, N/A, 226-8503, Japan, 0081459245874, 0081459245147
Hiroshi Ishiwara
Affiliation:
[email protected], Tokyo Institute of Technology, Yokohama, N/A, 226-8503, Japan
Get access

Abstract

Mn-substituted BiFeO3 (BFO) thin films were formed by chemical solutions deposition on Pt/Ti/SiO2/Si(100) structures. Effects of the Mn-substitution on the structure and ferroelectricity of BFO films were examined. We found that the lattice structure of the film is sensitive to the Mn-substitution and the secondary phase is appears in 50% Mn-substituted BFO films. The leakage current were increased with the Mn-substitution. However, the 5% Mn-substituted BFO film shows low leakage current than undoped BFO films in a high electric field than 0.5 MV/cm. Due to the low leakage current in Mn-doped 3, 5 and 7% BFO films, the saturated P-E hysteresis loops with remanent polarization around 100 μC/cm2 were obtained at RT.

Keywords

ferroelectricchemical synthesisx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 933: Symposium G – Science and Technology of Nonvolatile Memories , 2006 , 0933-G03-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Hill, N. A., J. Phys. Chem. B 104, 6694 (2000).Google Scholar
[2] Smolenskii, G. A., Chupis, I., Sov. Phys. Ups. 25, 475 (1982).Google Scholar
[3] Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., Viehland, D., Vaithyanathan, V., Schlom, D. G., Waghmare, U. V., Spaldin, N. A., Rabe, K. M., Wuttig, M., and Ramesh, R., Science 299, 1719 (2003).Google Scholar
[4] Yun, K. Y., Ricinschi, D., Kanashima, T., Noda, M., and Okuyama, M., Jpn. J. Appl. Phys 43, Part 2, L–647 (2004).Google Scholar
[5]Singh, S. K., and Ishiwara, H., Jap. J. Appl. Phys. 44, Part 2, L734 (2005).Google Scholar
[6] Singh, S. K. and Ishiwara, H., Jpn. J. Appl. Phys. 45, 4B (2006).Google Scholar
[7] Jun, Y. K., Moon, W. T., Chang, C. M., Kim, H. S., Ryu, H. S., Kim, J. W., Kim, K. H. and Hong, H. Y., Solid State Communications 135, 133 (2005).Google Scholar
[8] Palkar, V. R., Kundaliya, D. C., and Malik, S. K., J. Appl. Phys. 93, 4337 (2003).Google Scholar