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Examination of Gallium Arsenide Mocvd Reaction Mechanisms

Published online by Cambridge University Press:  15 February 2011

Robert S. Windeler  and
Robert F. Hicks
Robert S. Windeler
Affiliation:
University of California, Los Angeles, Department of Chemical Engineering, 5531 Boelter Hall, Los Angeles, CA 90024-1592
Robert F. Hicks
Affiliation:
University of California, Los Angeles, Department of Chemical Engineering, 5531 Boelter Hall, Los Angeles, CA 90024-1592
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Abstract

A mathematical model has been developed of the reactor used by Larsen et al. [1] to study the kinetics of gallium arsenide MOCVD.- Two different surface reactions were considered as the rate-limiting step in film growth below 500°C: (1) the desorption of methyl radicals from adsorbed trimethylgallium, and (2) the reaction of CH3 and H groups from adsorbed trimethylgallium and arsine to make methane. The latter step is consistent with the experimental results. It explains the rapid acceleration of the precursor decomposition rates when they are fed together to the reactor. It also explains why methane is the only hydrocarbon generated from trimethylgallium and arsine decomposition in deuterium at V/Ill ratios greater than 1.0.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 151
Copyright
Copyright © Materials Research Society 1993

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