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Examination of 1-D Position Sensitive Detector Performance Through Analysis of Front Contact Heterojunction

Published online by Cambridge University Press:  10 February 2011

M. Topiˇ ,
F. Smole ,
J. Furlan ,
E. Fortunato  and
R. Martins
M. Topiˇ
Affiliation:
University of Ljubljana, Faculty of Electrical Engineering, Tržaška 25, SI- 1000 Ljubljana, Slovenia
F. Smole
Affiliation:
University of Ljubljana, Faculty of Electrical Engineering, Tržaška 25, SI- 1000 Ljubljana, Slovenia
J. Furlan
Affiliation:
University of Ljubljana, Faculty of Electrical Engineering, Tržaška 25, SI- 1000 Ljubljana, Slovenia
E. Fortunato
Affiliation:
Materials Science Dep., Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal
R. Martins
Affiliation:
Materials Science Dep., Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal
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Abstract

The influence of different TCOs (SnO2 and ITO) on the photoelectrical properties of 1 -D position sensitive detectors based on p-i-n structures was studied. A strong cross-contamination in the p-layer and contamination in the i-layer reduce the quality of the device. Numerical analysis of TCO/p-i-n structure also revealed a strong increase in defect states at the p-layer surface which can be attributed to the reduction of TCO. ITO seems to be less appropriate for a front TCO, although the spectral response of the p-i-n structure under reverse bias is not significantly affected by the conditions at the TCO/p heterojunction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 171
Copyright
Copyright © Materials Research Society 1996

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References

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