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Exafs Studies of Semiconductors
Published online by Cambridge University Press: 26 February 2011
Abstract
Recent results from EXAFS spectroscopy are discussed, including (i) the determination of the site and local bond lengths of Fe impurities implanted into Si, (ii) the determination of the ferroelectric phase transition in Pb1−x Gex Te as order-disorder rather than displacive, and (iii) the nondestructive measurement of Aℓ diffusion into GaAs at an Aℓ/GaAs Interface.
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- Copyright © Materials Research Society 1987
References
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