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Exafs Studies of Group III-Nitrides

Published online by Cambridge University Press:  10 February 2011

N J Jeffs ,
A V Blant ,
T S Cheng ,
C T Foxon ,
C Bailey ,
P G Harrison ,
J F W Mosselmans  and
A J Dent
N J Jeffs
Affiliation:
Department of Physics, University of Nottingham, Nottingham, NG7 2RD, England
A V Blant
Affiliation:
Department of Physics, University of Nottingham, Nottingham, NG7 2RD, England
T S Cheng
Affiliation:
Department of Physics, University of Nottingham, Nottingham, NG7 2RD, England
C T Foxon
Affiliation:
Department of Physics, University of Nottingham, Nottingham, NG7 2RD, England
C Bailey
Affiliation:
Department of Chemistry, University of Nottingham, Nottingham, NG7 2RD, England
P G Harrison
Affiliation:
Department of Chemistry, University of Nottingham, Nottingham, NG7 2RD, England
J F W Mosselmans
Affiliation:
CLCR, Daresbury Laboratories, Warrington, Cheshire, WA4 4AD, England.
A J Dent
Affiliation:
CLCR, Daresbury Laboratories, Warrington, Cheshire, WA4 4AD, England.
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Abstract

The group III nitrides have important applications for blue/green LEDs, blue/UV laser diodes and for high-power high frequency FETs. In all such devices the alloys play an important role either in the active part of the structure or in the cladding regions. The properties of the group III-nitride alloys are not at present well understood and in particular there are indications that phase separation can occur. We have undertaken a comprehensive study of (InGa)N alloys using EXAFS in order to study such problems.

We have demonstrated recently that REFLEXAFS technique can be used to give interatomic distances for (InGa)N alloys using the In edge to measure the bond lengths as a function of In content over the complete range from InN to GaN. We have now extended this study by using the Total Electron Yield (TEY) EXAFS technique to study the bond lengths by using both the Ga and In edges for (InGa)N alloys. The TEY data for the (InGa)N alloy samples gives more reliable data for the In-In and In-Ga separations than the earlier REFLEXAFS studies. Data obtained for the In-Ga separation from the Ga and In edges agree well within experimental error.

The data obtained from this study suggest that the (InGa)N samples grown at low temperature do not exhibit evidence for phase separation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 519
Copyright
Copyright © Materials Research Society 1998

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References

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