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Exafs Studies of Cobalt Silicide Formation Produced by High Dose Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Z. Tan ,
J. I. Budnick ,
F. Sanchez ,
G. Tourillon ,
F. Namavar ,
H. Hayden  and
A. F. Fasihuddin
Z. Tan
Affiliation:
University of Connecticut, Dept. of Physics and Institute of Materials Science, Storrs, CT 06268.
J. I. Budnick
Affiliation:
University of Connecticut, Dept. of Physics and Institute of Materials Science, Storrs, CT 06268.
F. Sanchez
Affiliation:
University of Connecticut, Dept. of Physics and Institute of Materials Science, Storrs, CT 06268.
G. Tourillon
Affiliation:
University of Connecticut, Dept. of Physics and Institute of Materials Science, Storrs, CT 06268.
F. Namavar
Affiliation:
University of Connecticut, Dept. of Physics and Institute of Materials Science, Storrs, CT 06268.
H. Hayden
Affiliation:
University of Connecticut, Dept. of Physics and Institute of Materials Science, Storrs, CT 06268.
A. F. Fasihuddin
Affiliation:
University of Connecticut, Dept. of Physics and Institute of Materials Science, Storrs, CT 06268.
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Abstract

The early stages of cobalt silicide formation in high dose (1.0 to 8.0× 1017Co/cm2) cobalt implanted Si(100) are studied by extended X-ray absorption fine structure (EXAFS), X-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). Locally ordered silicide that is not detectable in XRD has been observed with EXAFS in the as-implanted samples. Long-range ordered phases are observed in the 3 × 1017Co/cm2 samples. After thermal annealing at 700–750°C, single phase CoSi2 with (400) orientation is formed in all implants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 143: Symposium V – Synchrotron Radiation in Materials Research , 1988 , 145
Copyright
Copyright © Materials Research Society 1989

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References

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