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Evolution of the Optical Response from a Very Narrow Gap Semiconductor to a Metallic Material in (FexMn1−x)Si

Published online by Cambridge University Press:  15 February 2011

S. Bocellip ,
F. Marabelli ,
R. Spolenak  and
E. Bauer
S. Bocellip
Affiliation:
INFM - Dipartimento di Fisica “A.Volta”, Università di Pavia, Via Bassi 6,1-27100 Pavia, Italy
F. Marabelli
Affiliation:
INFM - Dipartimento di Fisica “A.Volta”, Università di Pavia, Via Bassi 6,1-27100 Pavia, Italy
R. Spolenak
Affiliation:
INFM - Dipartimento di Fisica “A.Volta”, Università di Pavia, Via Bassi 6,1-27100 Pavia, Italy Institut für Experimentalphysysik, Technical University Vienna, A-1040 Wien, Austria
E. Bauer
Affiliation:
Institut für Experimentalphysysik, Technical University Vienna, A-1040 Wien, Austria
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Abstract

A study of the electrical resisitivity of (Fex.Mn1−x)Si with 0 < x < 1 indicates a crossover from an almost semiconducting state in FeSi to a metallic one in MnSi. Optical measurements show that the electronic structure and the vibrational behaviour appears to be essentially uneffected by the Fe/Mn substitution. Instead, a change of the free carrier density occurs, yielding a temperature and stoichiometry dependent plasma frequency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 361
Copyright
Copyright © Materials Research Society 1996

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References

1. von Känel, H., Kafader, U., Sutter, P., Onda, N., Sirringhaus, H., Müller, E., Kroll, U., Schwarz, C., and Goncalves-Conto, S., Mat. Res. Soc. Symp. Proc. 320, 73 (1994).Google Scholar
2. Phragmen, G., Jernkontor. Ann. 107, p. 121 (1923).Google Scholar
3. Jaccarino, V., Wertheim, G.K., Wernick, J.H., Walker, L.R. and Arajs, S., Phys. Rev. B 160, p. 476 (1967).Google Scholar
4. Mattheis, L.F. and Hamann, D.R., Phys. Rev. B 47 p. 13,114 (1993).Google Scholar
5. Schlesinger, Z., Fisk, Z., Zhang, Hai-Tao, Maple, B., DiTusa, J.F. and Aeppli, G., Phys. Rev. Lett. 71 p. 1,748 (1993).Google Scholar
6. Degiorgi, L., Hunt, M., Ott, H.R. and Fisk, Z., Physica B 206 – 207, p. 810 (1995).Google Scholar
7. Degiorgi, L., Hunt, M.B., Ott, H.R., Dressel, M., Feenstra, B.J., Grüner, G., Fisk, Z. and Canfield, P., Europhys. Lett. 28 p. 341 (1994).Google Scholar
8. Harris, P., PhD Thesis, Riso National Laboratory, Denmark (1994).Google Scholar
9. Spolenak, R., Bauer, E., Müller, H., Kirchmayr, H., Blaha, P., Mohn, P., Schwarz, K.. J. Magn. Magn. Mat. (1996) in press.Google Scholar
10. Wire, M.S., Thompson, J.D., Fisk, Z., Phys. Rev. B 30 p. 5591 (1983).Google Scholar
11. Gratz, E., Sassik, H., Nowotny, H., J. Phys. F 11, p. 429 (1981)Google Scholar
12. Hauser, R., Bauer, E., Gratz, E., Hiufler, Th., Hilscher, G., Wiesinger, G., Phys. Rev. B 50 p. 13493 (1994).Google Scholar
13. Ishikawa, Y., Noda, Y., Uemura, Y.J., Majkrzak, C.F. and Shirane, G., Phys. Rev. B 31 p. 5884 (1985).Google Scholar
14. Pfleiderer, C., McMullan, G.J., Lonzarich, G.G., Physica B 199 – 200 p. 634 (1994)Google Scholar
15. Spolenak, R. Diplom-Thesis, Technical University Vienna, Austria (1995).Google Scholar
16. Grimvall, G., Thermophysical Propeties of Materials, North Holland Publishing, Amsterdam, 1986.Google Scholar
17. Ohta, H., Kinmura, S., Kulatov, E., Halilov, S., Nanba, T., Motokawa, M., Sato, M. and Nagasaka, K., J. Phys. Soc. Japan, 63, p. 4206 (1994).Google Scholar