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Evolution of the Luminescence Spectrum During the Dry and Steam Oxidation of SiGe Films

Published online by Cambridge University Press:  01 February 2011

A. Rodríguez ,
J. Sangrador ,
T. Rodríguez ,
A. C. Prieto ,
M. Avella  and
J. Jiménez
A. Rodríguez
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain.
J. Sangrador
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain.
T. Rodríguez
Affiliation:
Dpto. Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain.
A. C. Prieto
Affiliation:
Dpto. Física de la Materia Condensada, E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
M. Avella
Affiliation:
Dpto. Física de la Materia Condensada, E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
J. Jiménez
Affiliation:
Dpto. Física de la Materia Condensada, E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
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Abstract

The luminescence emission arising from SiGe layers oxidized in dry or wet atmospheres has been studied and the results obtained in both cases have been compared. Additional characterization of the samples by Raman and FTIR spectroscopies, which give information on the remaining SiGe layer and on the composition of the growing oxides respectively, have allowed the luminescence and the structural features of the samples at each stage of the oxidation processes to be correlated. SiGe layers of two different thickness have been used in order to clearly establish the origin of the different emissions, eliminating the contribution of the oxide and linking them to the presence of nanoparticles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F7.7
Copyright
Copyright © Materials Research Society 2005

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References

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