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Evolution of the GaAs(001) Surface Physico-Chemical Characteristics and Electrical Properties of the Si3N4/GaAs Interface with the NH3Photolysis Treatment of the GaAs Surface.

Published online by Cambridge University Press:  26 February 2011

J.L. Guizot ,
P. Alnot ,
J. Perrin  and
B. Allain
J.L. Guizot
Affiliation:
Laboratoire Central de Recherche (LCR) Thomson-CSF, Orsay 91940, France.
P. Alnot
Affiliation:
Laboratoire Central de Recherche (LCR) Thomson-CSF, Orsay 91940, France.
J. Perrin
Affiliation:
Laboraroire de Physique des Interfaces et Couches Minces (LP1CM) Ecole Polytechnique, Palaiseau France.
B. Allain
Affiliation:
Laboraroire de Physique des Interfaces et Couches Minces (LP1CM) Ecole Polytechnique, Palaiseau France.
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Abstract

Cleaning treatments of GaAs(001) by UV decomposition of NH3 has been studied by means of X-ray photoemission spectroscopy (XPS) and X-ray photoelectron diffraction (XPD). This photolysis treatment is shown to decompose the surperficial oxides and to remove the carbon of contamination. The surface cleaning is followed by the formation of gallium nitride overlayers. When used prior to UVCVD silicon nitride deposition, this treatment is shown to improve the electrical characteristics of the Si3N4/GaAs MIS structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 513
Copyright
Copyright © Materials Research Society 1989

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References

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