Article contents
Evidence of Reduced Self Heating with Partially Depleted SOI MOSFET Scaling
Published online by Cambridge University Press: 01 February 2011
Abstract
The temperature rise in SOI has been measured on two successive generations. This work shows that self-heating effects become less and less severe with both MOSFET and power supply voltage scaling.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2006
References
2
Dallmann, D. A. and Shenai, K., IEEE Transactions on Electron Devices, vol. 42, n° 3, March 1995, pp. 489–496.Google Scholar
3
Su, L. T., Chung, J.E., Antoniadis, D.A., Goodson, K. E. and Flik, M. I., IEEE Transactions on Electron Devices, vol. 41, n° 1, January 1994, pp. 69–75.Google Scholar
4
Tenbroek, B. M., Redman-White, W., Lee, M. S. L. and Uren, M. J., Proceeding 1995, IEEE International SOI Conference, October 1995, pp. 48–49.Google Scholar
5
Workmann, G. O., Fossum, J. G., Krishnan, S. and Pelella, M. M., IEEE Transactions on Electron Devices, vol. 45, n° 1, January 1998, pp. 125–133.Google Scholar
6 BSIM3SOI MOSFET Model Users' Manual, University of California at Berkeley, February 2002.Google Scholar
- 6
- Cited by