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Evidence of Potential Fluctuations in Modulation Doped GaN/AlGaN Heterostructures

Published online by Cambridge University Press:  10 February 2011

A. V. Buyanov ,
J. Sandberg ,
J. P. Bergman ,
B. E. Sernelius ,
P-O Holtz ,
B. Monemar ,
H. Amano  and
I. Akasaki
A. V. Buyanov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
J. Sandberg
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
J. P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. E. Sernelius
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
P-O Holtz
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JAPAN
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JAPAN
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Abstract

We report on novel transport and optical data for GaN/AlGaN modulation doped heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Variable temperature galvanomagnetic, resistivity, photoluminescence and photoconductivity measurements have been performed. Evidence for potential fluctuations is provided by the observation of weakly localized transport at low temperatures, together with a negative magnetoresistance due to disorder in the interface region. Additional evidence for a built-in electric field caused by the fluctuations near the heterointerface region is given by the observation of photoconductivity dips resonant with free excitons, indicating free exciton ionization. It is concluded that interface roughness, dislocations, and similar structural defects, have a strong influence on the transport properties of the two-dimensional electron gas in these structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 585
Copyright
Copyright © Materials Research Society 1998

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References

1. Kreshchuk, A. M., Novikov, S. V., and Savel'ev, I. G., Sov. Phys. Semicond. 26, 771, (1992).Google Scholar
2. Kreshchuk, A. M., Novikov, S. V., Polyanskaya, T. A., Savel'ev, I. G., and Shik, A. Ya., Journ. of Cryst. Growth 146, 153 (1995).Google Scholar
3. Walukiewicz, W., Hopkins, P. F., Sundaram, M., and Gossard, A. C., Phys. Rev. B 44, 10909 (1991).Google Scholar
4. Abrahams, E., Anderson, P. W., Licciardello, D. C., and Ramakrishnan, T. V., Phys. Rev. Lett. 42, 673, (1979).Google Scholar
5. Beenakker, W. J. and van Houten, H., in Solid State Physics, Advances in Research and Applications, (Academic, San Diego, 1991), Vol.44.Google Scholar
6. Walukiewicz, W., Wang, L., Pawlowicz, L. M., Lagowski, J. and Gatos, H. C., Joum. Appl. Phys. 59, 3144 (1986).Google Scholar
7. Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl Phys Lett 48, 353 (1986)Google Scholar
8. Qiu, C. H., Melton, W., Leksono, M. W., Pankove, J. I., Keller, B. P., and DenBaars, S. P., Appl. Phys. Lett. 69, 1282, (1996).Google Scholar
9. Look, D. C., Stutz, C. E., and Bozada, C. A., J. Appl. Phys. 74, 311 (1993).Google Scholar
10. Mensz, P. M. and Wheeler, R. G., Phys. Rev. B 35, 2844, (1987).Google Scholar
11. Szott, W., Jedrzekjek, C., and Kirk, W. P., Phys. Rev. B 48, 8963, (1993).Google Scholar
12. Peritz, R. L., Phys. Rev. 110, 1254 (1958)Google Scholar
13. Redwing, J. M., Tischler, M. A., Flynn, J. S., Elhamri, S., Ahouija, M., Newrock, R. S., and Mitchel, W. C.: Appl Phys Lett 69 (1996) 963 Google Scholar
14. Mohammad, S. N., Salvador, A. A., and Morkoc, H., Proc. IEEE 83, 1306 (1995)Google Scholar
15. Volm, D., Oettinger, K., Streibl, T., Kovalev, D., Ben-Chorin, M., Diener, J., Meyer, B. K., Majewski, J., Eckey, L., Hoffmann, A., Amano, H., Akasaki, I., Hiramatsu, K., Detchprohm, T.: Phys. Rev. B 53, 16543 (1996)Google Scholar
16. Binet, F., Duboz, J. Y., Rosencher, E., Scholz, F., and Härle, V.: Phys Rev B 54, 8116 (1996)Google Scholar