Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:38:16.364Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence of High Electron Mobility in CdGeAs2 Single Crystals

Published online by Cambridge University Press:  10 February 2011

V.Yu. Rud' ,
Yu.V. Rud' ,
R. Pandey  and
M. C. Ohmer
V.Yu. Rud'
Affiliation:
State Technical Univ, Dept of Experimental Physics, St. Petersburg, 195251 Russia, rudvas@uniys. hop. stu.neva.ru
Yu.V. Rud'
Affiliation:
A F loffe Physico-Technical Inst, Dept of Solid State Physics, St. Petersburg, 194021 Russia
R. Pandey
Affiliation:
Michigan Technological Univ, Dept of Physics, Houghton, MI
M. C. Ohmer
Affiliation:
Air Force Research Laboratory, Wright Patterson AFB, OH 45433
Get access

Abstract

CdGeAs2 single crystals were prepared by low temperature crystallization from a nonstoichiometric melt. The results of the first study of the temperature dependencies of the electrical conductivity and the Hall coefficient of n-type CdGeAs2 single crystals prepared by this new technique are reported. All the as-grown crystals show n-type conductivity. These single crystals had free electron concentrations of (1 - 2) 1018 cm−3 and Hall mobilities of more than 10000 cm2/(Vs) at T=300 K. These room temperature electron mobility values are four times larger than previously reported. In the high temperature region (T> 150K), the temperature dependence of the Hall mobility exhibited a behavior characteristic of phonon scattering. Below 150 K, a deviation from this behavior indicated an increasing contribution of static lattice defects to scattering. The Hall mobility in these crystals was found to reach ∼ 36000 cm2/( V· s ) at 77 K. The first photosensitive n-type CdGeAs2/n-type InSe heterostructures were constructed by contact methods. Photosensitivities of 70-100 V/were observed. This is substantially better than for previous structures using conventionally grown CdGeAs2 and indicates the high quality of the crystals. It is concluded that the low temperature growth technique is promising for the preparation of more perfect CdGeAs2crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 439
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Goryunova, N.A., (State University, Leningrad,1963).Google Scholar
2. Madelung, O.M., (Wiley, New York, 1964).Google Scholar
3. Prochukhan, V.D., Rud', Yu.V., Soy. Phys. Semicond. 12, 118 (1978).Google Scholar
4. Ohmer, M.C., Pandey, R., MRS Bull. 23, 16 (1998).Google Scholar
5. Schunemann, P.G., Pollak, T.M., MRS Bull. 23, 23 (1998).Google Scholar
6. Bairamov, B.H., Rud', V.Yu., Rud', Yu.V., MRS Bull. 23, 41(1998).Google Scholar
7. Schunemann, P.G., Schepler, K.L., Budni, P.A., MRS Bull. 23, 45 (1998).Google Scholar
8. Bairamov, B.H., Polushina, I.K., Rud', V.Yu., Rud', Yu.V., Schunemann, P.G., Ohmer, M.C., Fernelius, N.C., Irmer, G., Monecke, J., Phys. Solid State 40, 212 (1998).Google Scholar
9. Mekhtiev, R.F., Osmanov, E.O., Rud', Yu.V., Prib. Tekh. Eksp., No 2, 179 (1964).Google Scholar
10. Vaipolin, A.A., Gashimzade, F.M., Goryunova, N.A., Kesamanly, F.P., Nasledov, D.N., Osmanov, E.O., Rud', Yu.V., Izv. Akad. Nauk SSSR, Ser. Phys. 28, 1085 (1964).Google Scholar
11. Goryunova, N.A., Kesamanly, F.P., Osmanov, E.O., Rud', Yu.V., Izv. Acad. Nauk SSSR, Ser. Inorg. Mater. 1, 885 (1965).Google Scholar
12. Rud', V.Yu., Rud', Yu.V., Tech. Phys. Lett. 22, 107 (1996).Google Scholar
13. Zlatkin, L.B., Markov, Yu.F., Polushina, I.K., Sov. Phys. Semicond. 3, 1336 (1969).Google Scholar
14. Shay, J. L. and Wernick, J. H.:. (Pergamon Press, New York, 1975).Google Scholar
15. Kesamanly, F.P., Rud', V.Yu. Rud', Yu.V., Semicond. 30, 1001 (1996).Google Scholar
16. Konstansinova, N.N., Magomedov, M.A., Rud', V.Yu., Rud', Yu.V., Sov. Phys. Semicond. 26, 317 (1992).Google Scholar
17. Shileika, A., Surf Sci. 37, 730 (1973).Google Scholar
18. Mekhtiev, N.M., Rud', Yu.V., Salaev, E.Yu., Sov. Phys. Semicond. 12, 924 (1978).Google Scholar
19. Borshchevskii, A.S., Dagina, N.E., Lebedev, A.A., Ovezov, K., Polushina, I.K., Rud', Yu.V., Sov. Phys. Semicond. 10, 934 (1976).Google Scholar
20. Borshchevskii, A.S., Dagina, N.E., Lebedev, A.A., Polushina, I.K., Rud', Yu.V., Soy. Phys. Semicond. 10, 1136 (1976).Google Scholar
21. Abdurakhimov, A.A., Rud', Yu.V., Sanin, K.V., Serginov, M., Skoryukin, V.E., Sov. Tech. Phys. 28, 199 (1983).Google Scholar
22. Rud', Yu.V., Undalov, Yu.K., Dagina, N.E., Sov. Phys. Semicond. 26, 317 (1992).Google Scholar