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Evidence of Electrical Interactions between Photo-Induced Charge Carriers and Moving Dislocations in Red Mercuric Iodide

Published online by Cambridge University Press:  21 February 2011

Jochen Marschall  and
Frederick Milstein
Jochen Marschall
Affiliation:
Departments of Materials and Mechanical Engineering, University of California, Santa Barbara, CA 93106.
Frederick Milstein
Affiliation:
Departments of Materials and Mechanical Engineering, University of California, Santa Barbara, CA 93106.
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Abstract

Variations in both the hole and the electron photocurrents in single crystals of mercuric iodide (HgI2) are measured during plastic deformation by shearing over (001) planes. The results demonstrate the presence of electrical interactions between moving “easy glide” dislocations and photo-induced charge carriers in HgI2. It is found that both hole and electron photocurrents are decreased during dislocation motion and that the extent of this effect (and the subsequent recovery after deformation ceases) depends on the applied bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 131
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Gerrish, V. and Berg, L. van den, Nucl. Instrum. Meth. A299, 41 (1990).Google Scholar
2. James, T. W. and Milstein, F., J. Mater. Sci. 18, 3249 (1983).Google Scholar
3. James, T. W. and Milstein, F., Appl. Phys. Lett. 52, 538 (1988).Google Scholar
4. Milstein, F., James, T.W., and Georgeson, G., Nucl. Instr. and Meth. A285, 500 (1989).CrossRefGoogle Scholar
5. Marschall, J., Milstein, F., Georgeson, G., and Gerrish, V. in Mechanical Behaviour of Materials and Structures in Microelectronics, edited by Suhir, E., Cammarata, R. C., and Chung, D. L. (Mater. Res. Soc. Proc. 226, Pittsburgh, PA,1991) pp. 351–356.Google Scholar
6. Marschall, J. and Milstein, F., Appl. Phys. Lett. 58, 1422 (1991).Google Scholar
7. Georgeson, G. and Milstein, F., J. Mater. Sci. 23, 3792 (1988).CrossRefGoogle Scholar
8. Gerrish, V., (private communication).Google Scholar
9. Mellet, J. and Friant, A, Nucl. Instrum. Meth. A283,199 (1989).CrossRefGoogle Scholar
10. Milnes, A. G., Deep Impurities in Semiconductors, (John Wiley & Sons, Inc., New York, 1973), pp. 166–174.Google Scholar
11. Rose, A., Phys. Rev 97, 322 (1955).CrossRefGoogle Scholar
12. Zaretskii, A. V. and Petrenko, V. F., Sov. Phys. Solid State 26, 1412 (1984).Google Scholar