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Evidence for Strongly Enhanced Paramagnetic Defect Creation in Low Temperature Pecvd SiO2 Films

Published online by Cambridge University Press:  21 February 2011

R. A. B. Devine  and
R. L. Pfeffer
R. A. B. Devine
Affiliation:
On leave from the CNET, Meylan, France
R. L. Pfeffer
Affiliation:
U.S. Army ETDL, Fort Monmouth, New Jersey 07703
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Abstract

Amorphous SiO2 films have been deposited by plasma enhanced chemical vapor deposition (N2O:SiH4 flow rate ratio of 40:1) then 60Co gamma irradiated. We observe paramagnetic defects similar to oxygen vacancy centers which are created at least 100 times more efficiently in as-deposited oxide than in the same oxide annealed for 1 hr in Ar at 950°C. Positive fixed oxide charge creation in samples irradiated in the unbiased mode has a fractional yield of 0.018 defects per electron-hole pair. No enhancement of the positive fixed oxide charge creation is observed when comparing as-deposited and annealed films suggesting that the paramagnetic and electric defects do not have the same physical origin. Comments are made about the potential hazards of using such deposited oxide near a semiconductor surface where surface inversion may occur.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 119
Copyright
Copyright © Materials Research Society 1990

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References

1. Burke, E.P., J. Appl. Phys. 59, 1673 (1986).Google Scholar
2. Chang, E.Y., Cibuzar, G.T. and Pande, K.P., IEEE Trans. Elect. Dev. ED–35, 1412 (1988).Google Scholar
3. Buschbom, M.L., Jeffrey, E.N., Rhine, L.E. and Spratt, D.B., IEEE Trans. Nucl. Sci. NS–30, 4105 (1983).Google Scholar
4. Pease, R.L., Turfler, R.M., Platteter, D., Emily, D. and Blice, R., IEEE Trans. Nucl. Sci. NS–30, 4216 (1983).Google Scholar
5. Batey, J. and Tierney, E., J. Appl. Phys. 60, 3136 (1986).Google Scholar
6. Batey, J., Tierney, E., and Nguyen, T. N., IEEE Elect. Dev. Lett. EDL–8, 148 (1987).Google Scholar
7. Devine, R.A.B., J. Appl. Phys. (in press).Google Scholar
8. Feigl, F.J., Fowler, W.B., and Yip, K.L., Sol. State Comm. 14, 225 (1974).Google Scholar
9. Devine, R.A.B. and Arndt, J., Phys. Rev. B39, 5132 (1989).Google Scholar
10. Sze, S.M., The Physics of Semiconductor Devices (John Wiley, N.Y. 1981), p. 383.Google Scholar
11. Lenahan, P.M. and Dressendorfer, P.V., J. Appl. Phys. 55, 3995 (1984).Google Scholar
12. Warren, W.L., Lenahan, P.M., Robinson, B., and Stathis, J.H., Appl. Phys. Lett. 53, 482 (1988).Google Scholar
13. Srour, J.R., Othmer, S., Curtis, O.L. Jr., and Chu, K.Y., IEEE Trans. Nucl. Sci. NS–23, 1513 (1976).Google Scholar
14. Oldham, T.R. and McGarrity, J.M., IEEE Trans. Nucl. Sci. NS–30, 4377 (1983).Google Scholar
15. Gerardi, G.J. (private communication).Google Scholar