Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T01:57:28.320Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence for Strong Trapping by Ionized Donors of Free Excitions in Excited States for High Purity GaAs and AlGaAs

Published online by Cambridge University Press:  25 February 2011

S. Zemon  and
G. Lambert
S. Zemon
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
G. Lambert
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
Get access

Abstract

Striking increases in the intensity of donor-related, photoluminescence transitions are observed in undoped (1014-1015 cm-3) GaAs for excitation energies (Ee) in the vicinity of the band-gap energy (Eg). The enhancement has maxima at Ee consistent with excitation of the n=2 and 3 states of the free exciton (Xn=2,3) and appears to be correlated to the concentration of ionized donors, suggesting that the effects are related to capture of electron-hole pairs by ionized donors through trapping of Xn=2,3. The enhancement decreases monotonically as Ee increases to values as much as 12 meV above Eg.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 109
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 For an absorption spectrum of high purity GaAs, see in Weisbuch, C., Ph. D. thesis, University of Paris, 1977 and M. D. Sturge, in Excitons, edited by Rashba, E. I. and Sturge, M. D. (North-Holland, Amsterdam, 1982), Chap. 1, p. 11.Google Scholar
2 Heim, U. and Hiesinger, P., Phys. Stat. Sol. B 66, 461 (1974).Google Scholar
3 Black, J., Norris, P., Koteles, E., and Zemon, S., Inst. Phys. Conf. Ser. 74, 683 (1985).Google Scholar
4 Shastry, S. K., Zemon, S., and Norris, P., Inst. Phys. Conf. Ser. 83, 81 (l987);S. K. Shastry, S. Zemon, D. G. Kenneson, and G. Lambert, Appl. Phys. Lett. 52, 150 (1988).Google Scholar
5 Salerno, Jack P., Koteles, E. S., Gormley, J. V., Sowell, B. J., Brody, E. M., Chi, J. Y., and Holmstrom, R. P., J. Vac. Sci. Technol. B 3, 618 (1985).Google Scholar
6 Zemon, S., Norris, P., and Lambert, G., J. Cryst. Growth 77, 321 (1986).Google Scholar
7 Sell, D. D., Phys. Rev. B 6, 3750 (1972).Google Scholar
8 Shastry, S. K., Zemon, S., Dugger, D. and DeAngelis, M. , Inst. Phys. Conf. Ser. 91, 307 (1988).Google Scholar
9 Zemon, S., Jagannath, C., Shastry, S. K., Miniscalco, W. J., and Lambert, G., Appl. Phys. Lett. 53, 213 (1988).Google Scholar
10 Zemon, S. and Lambert, G. (to be published).Google Scholar
11 See, for example, Zemon, S., Jagannath, C., Shastry, S. K., and Lambert, G., Solid State Commun. 65, 553 (1988).Google Scholar
12 Ulbrich, R. and Moreth, B., Solid State Commun. 14, 331 (1974).Google Scholar
13 Stillman, G. E., Wolfe, C. M., and Dimmock, J. O., Solid State Commun. 7, 921 (1969).Google Scholar
14 Dimmock, John O., in Semiconductors and Semimetals, edited by Willardson, R. K. and Beer, Albert C. (Academic, New York, 1967), Vol. 3, p. 259.Google Scholar
15 See, for example, Elliot, R. J., in Polarons and Excitons, edited by Kuper, C. G. and Whitfield, G. D. (Oliver and Boyd, Edinburgh, 1963), pp. 269–293.Google Scholar