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Evidence for Oxygen DX Centers in AlGaN

Published online by Cambridge University Press:  10 February 2011

M. D. Mccluskey ,
N. M. Johnson ,
C. G. Van De Walle ,
D. P. Bour ,
M. Kneissl  and
W. Walukiewicz
M. D. Mccluskey
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
C. G. Van De Walle
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
D. P. Bour
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
M. Kneissl
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
W. Walukiewicz
Affiliation:
Lawrence Berkeley National Laboratory, MS 2-200, 1 Cyclotron Rd., Berkeley, CA 94720
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Abstract

Experimental and theoretical evidence is presented for oxygen DX centers in AlxGa1−xN. As the aluminum content increases, Hall effect measurements reveal an increase in the electron activation energy, consistent with the emergence of a deep DX level from the conduction band. Persistent photoconductivity is observed in Al0 39Ga0. 61N:O at temperatures below 150 K after exposure to light, with an optical threshold energy of 1.3 eV, in excellent agreement with first-principles calculations. Unlike oxygen, silicon does not exhibit DX-like behavior, in agreement with previous theoretical predictions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 531
Copyright
Copyright © Materials Research Society 1998

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References

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