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Evidence for Oxygen Concentration Changes Induced by Low-Temperature 0–18 Implantation into a SIMOX Buried-Oxide Layer

Published online by Cambridge University Press:  28 February 2011

P.J. Scanlon ,
P.L.F. Hemment ,
A.K. Robinson ,
K.J. Reeson ,
R.J. Chater ,
J.A. Kilner  and
G. Harbeke
P.J. Scanlon
Affiliation:
Queen's University, Kingston, Ontario, Canada
P.L.F. Hemment
Affiliation:
University of Surrey, Guildford, England
A.K. Robinson
Affiliation:
University of Surrey, Guildford, England
K.J. Reeson
Affiliation:
University of Surrey, Guildford, England
R.J. Chater
Affiliation:
Imperial College, London, England
J.A. Kilner
Affiliation:
Imperial College, London, England
G. Harbeke
Affiliation:
SIN c/o Laboratories RCA, Zurich, Switzerland
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Abstract

RBS, SIMS, and IR measurements have been made on a SIMOX wafer, implanted with a second, low-temperature oxygen implant. These measurements indicate changes in the oxygen/silicon ratio in the buried oxide layer and differences in the annealing behaviour of the original layer and the double implant layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 141
Copyright
Copyright © Materials Research Society 1988

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References

1 Namavar, F., Budnick, T.I., Sanchez, F.H., and Hayden, H.C., Proc. Mat. Res. Soc. 53, 233 (1986).Google Scholar