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Evidence for Oxygen Concentration Changes Induced by Low-Temperature 0–18 Implantation into a SIMOX Buried-Oxide Layer
Published online by Cambridge University Press: 28 February 2011
Abstract
RBS, SIMS, and IR measurements have been made on a SIMOX wafer, implanted with a second, low-temperature oxygen implant. These measurements indicate changes in the oxygen/silicon ratio in the buried oxide layer and differences in the annealing behaviour of the original layer and the double implant layer.
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- Copyright © Materials Research Society 1988
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