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Evidence for Non-Equilibrium Vacancy Concentrations Controlling Interdiffusion in III-V Materials

Published online by Cambridge University Press:  10 February 2011

W.P. Gillin ,
O.M. Khreis  and
K.P. Homewood
W.P. Gillin
Affiliation:
Dept. of Physics, Queen Mary and Westfield College, University of London, London, El 4NS, United Kingdom
O.M. Khreis
Affiliation:
Hijjawi faculty for Engineering and Technologies, Yarmouk University, Irbid, Jordan
K.P. Homewood
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
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Abstract

Interdiffusion and self-diffusion in III-V semiconductors has usually been assumed to operate through the diffusion of point defects, the concentrations of which are at thermal equilibrium values. We have studied the interdiffusion of multiple quantum well samples, grown under a range of growth conditions, each containing a thin source of vacancies. This has enabled simultaneous measurements of the interdiffusion coefficient, diffusion coefficient for vacancies and the concentration of those vacancies in a single experiment. We have shown that independent of growth conditions, within a wide window of III-V flux ratio and temperature, the diffusion at all temperatures is governed by a constant background concentration of vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 401
Copyright
Copyright © Materials Research Society 1998

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References

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