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Evidence for Metastabile State of DX Center in AxGa1-xAs

Published online by Cambridge University Press:  03 September 2012

Subhasis Ghosh  and
Vikram Kumar
Subhasis Ghosh
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore-560012
Vikram Kumar
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore-560012
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Abstract

Photo-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 579
Copyright
Copyright © Materials Research Society 1992

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References

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