Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-28T23:35:59.318Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence for Island Growth on Deposition of Silver Onto Si(111)7 × 7 at Room Temperature

Published online by Cambridge University Press:  15 February 2011

E. J. Van Loenen ,
M. Iwami ,
R. M. Tromp ,
J. F. Van Der Veen  and
F. W. Saris
E. J. Van Loenen
Affiliation:
Fundamenteel Onderzoek der Materie–Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, (The Netherlands)
M. Iwami*
Affiliation:
Fundamenteel Onderzoek der Materie–Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, (The Netherlands)
R. M. Tromp
Affiliation:
Fundamenteel Onderzoek der Materie–Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, (The Netherlands)
J. F. Van Der Veen
Affiliation:
Fundamenteel Onderzoek der Materie–Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, (The Netherlands)
*
† Also at Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305, U.S.A.
Get access

Abstract

The growth process of silver deposited onto the Si(111) 7 × 7 surface at room temperature was studied with medium energy ion scattering in combination with channelling. Coverages studied were in the range 0−8 × 1015 Ag atoms cm−2. The measurements show that silver forms three-dimensional islands. Although incorporation of small amounts of silicon in the silver islands (less than 8 × 10−4 Si atoms cm−2) cannot be excluded, no evidence was found for mixing between silver and silicon or for silicide formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 9
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Venables, J. A., Derrien, J. and Janssen, A. P., Surf. Sci., 95 (1980) 411.CrossRefGoogle Scholar
2 Narusawa, T., Gibson, W. M. and Hiraki, A., Phys. Rev. B, 24 (8) (1981) 4835.CrossRefGoogle Scholar
3 Le Lay, G., Manneville, M. and Kern, R., Surf. Sci., 72 (1978) 405.CrossRefGoogle Scholar
4 Spiegel, K., Surf. Sci., 7 (1967) 125.Google Scholar
5 Wehking, F., Beckermann, H. and Niedermayer, R., Surf. Sci., 71 (1978) 364.Google Scholar
6 Housley, M., Heckingbottom, R. and Todd, C. J., Surf. Sci., 68 (1977) 179.Google Scholar
7 Saitoh, M., Shoji, F., Oura, K. and Hanawa, T., Surf. Sci., 112 (1981) 306.Google Scholar
8 Turkenburg, W. C., Kersten, H. H., Colenbrander, B. G., de Jongh, A. P. and Saris, F. W., Nucl. Instrum. Methods, 138 (1976) 271.CrossRefGoogle Scholar
Smeenk, R. G., Tromp, R. M., Kersten, H. H., Boerboom, A. J. H. and Saris, F. W., Nucl. Instrum. Methods, 195 (1982) 581.CrossRefGoogle Scholar
9 Tromp, R. M., van Loenen, E. J., Iwami, M., Smeenk, R. G., Saris, F. W., Nava, F. and Ottaviani, G., Surf. Sci., 124 (1983) 1.CrossRefGoogle Scholar
10 Chu, W. K., Mayer, J. W. and Nicolet, M.-A., Backscattering Spectrometry, Academic Press, New York, 1978.CrossRefGoogle Scholar
11 Culbertson, R. J., Feldman, L. C. and Silverman, P. J., Phys. Rev. Lett., 45 (25)(1980) 2043.Google Scholar
12 Tromp, R. M., van Loenen, E. J., Iwami, M. and Saris, F. W., Solid State Commun., 44 (6) (1982) 971.CrossRefGoogle Scholar
13 Ziegler, J. F., He Stopping Powers and Ranges in all Elements, Pergamon, New York, 1977.Google Scholar
14 van Loenen, E. J., Iwami, M., Tromp, R. M., van der Veen, J. F. and Saris, F. W., to be published.Google Scholar
15 Iwami, M., Tromp, R. M., van Loenen, E. J. and Saris, F. W., Proc. Int. Conf. on Defects in Semiconductors, Amsterdam, 1982, in Physica B, 116 (1983) 328.Google Scholar