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Evidence for Island Growth on Deposition of Silver Onto Si(111)7 × 7 at Room Temperature

Published online by Cambridge University Press:  15 February 2011

E. J. Van Loenen ,
M. Iwami ,
R. M. Tromp ,
J. F. Van Der Veen  and
F. W. Saris
E. J. Van Loenen
Affiliation:
Fundamenteel Onderzoek der Materie–Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, (The Netherlands)
M. Iwami*
Affiliation:
Fundamenteel Onderzoek der Materie–Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, (The Netherlands)
R. M. Tromp
Affiliation:
Fundamenteel Onderzoek der Materie–Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, (The Netherlands)
J. F. Van Der Veen
Affiliation:
Fundamenteel Onderzoek der Materie–Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, (The Netherlands)
*
† Also at Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305, U.S.A.
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Abstract

The growth process of silver deposited onto the Si(111) 7 × 7 surface at room temperature was studied with medium energy ion scattering in combination with channelling. Coverages studied were in the range 0−8 × 1015 Ag atoms cm−2. The measurements show that silver forms three-dimensional islands. Although incorporation of small amounts of silicon in the silver islands (less than 8 × 10−4 Si atoms cm−2) cannot be excluded, no evidence was found for mixing between silver and silicon or for silicide formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 9
Copyright
Copyright © Materials Research Society 1982

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References

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