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Evidence for a Grain Boundary Grooving Model of Agglomeration in Polycrystalline Tisi2 Thin Films

Published online by Cambridge University Press:  25 February 2011

Thomas Nolan ,
Robert Beyers  and
Robert Sinclair
Thomas Nolan
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Robert Beyers
Affiliation:
IBM-Almaden Research Center, 650 Harry Road, San Jose CA 95020–6099
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
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Abstract

An equilibrium model for agglomeration based upon the mechanism of grain boundary grooving in polycrystalline thin films is suggested. It involves an energy balance between surface, interface, and grain boundary energies, and predicts parameters which will influence the onset of agglomeration. It has been determined that small grain size, low grain boundary energy, high film surface and interface energies, and growth of single crystal epitaxial layers should promote resistance to agglomeration. Polycrystalline TiSi2 thin films deposited on Si substrates have been observed using cross-section TEM. The micrographs provide evidence that, for these films, the grain boundary grooving mechanism is dominant and most of the modeling assumptions are valid.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 95
Copyright
Copyright © Materials Research Society 1991

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References

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