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Evaporated Polycrystalline Germanium for Near Infrared Photodetection

Published online by Cambridge University Press:  09 August 2011

L. Colace ,
G. Masini ,
F. Galluzzi  and
G. Assanto
L. Colace
Affiliation:
Department of Electronic Engineering, University ‘Roma TRE’ à INFM Via della Vasca Navale, 84 - 1-00146- Rome - Italy
G. Masini
Affiliation:
Department of Electronic Engineering, University ‘Roma TRE’ à INFM Via della Vasca Navale, 84 - 1-00146- Rome - Italy
F. Galluzzi
Affiliation:
Department of Electronic Engineering, University ‘Roma TRE’ à INFM Via della Vasca Navale, 84 - 1-00146- Rome - Italy
G. Assanto
Affiliation:
Department of Electronic Engineering, University ‘Roma TRE’ à INFM Via della Vasca Navale, 84 - 1-00146- Rome - Italy
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Abstract

We present low cost near infrared photodetectors based on polycrystalline Ge film thermally evaporated on a silicon substrate. We demonstrate that, by proper choice of deposition conditions and device configuration, a responsivity of 16mA/W and a response time of a few nanoseconds can be achieved at the wavelength of 1.3micron. The device can operate up to 1.55micron. We also describe the fabrication and the operation of a 16 pixel linear detector array, with pitch of about 100 micron.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 469
Copyright
Copyright © Materials Research Society 1999

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