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Evaluation on Electromigration and Stressmigration of Metal Interconnections by Hardness Measurements

Published online by Cambridge University Press:  26 February 2011

T. Nakagawa
Affiliation:
VLSI Development Laboratories, IC Group, SHARP Corp., Tenri, Nara, 632, Japan
H. Miyatake
Affiliation:
VLSI Development Laboratories, IC Group, SHARP Corp., Tenri, Nara, 632, Japan
T. Maeda
Affiliation:
VLSI Development Laboratories, IC Group, SHARP Corp., Tenri, Nara, 632, Japan
K. Kuroda
Affiliation:
VLSI Development Laboratories, IC Group, SHARP Corp., Tenri, Nara, 632, Japan
N. Tokushige
Affiliation:
VLSI Development Laboratories, IC Group, SHARP Corp., Tenri, Nara, 632, Japan
R. Inoue
Affiliation:
VLSI Development Laboratories, IC Group, SHARP Corp., Tenri, Nara, 632, Japan
J. Kudo
Affiliation:
VLSI Development Laboratories, IC Group, SHARP Corp., Tenri, Nara, 632, Japan
T. Ashida
Affiliation:
VLSI Development Laboratories, IC Group, SHARP Corp., Tenri, Nara, 632, Japan
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Abstract

It is well known that the grain size of interconnections made from aluminum alloys affects electromigration and stressmigration tolerance. The hardness of three kinds of aluminum alloys is measured and it is shown that it has a strong correlation between the grain size of the aluminum alloy films. Stressmigration testing is done for those aluminum alloy films and it is found that the SM tolerance of aluminum films can be judged by the hardness of the films. Electromigration testing is also done and the results also confirm the correlation between EM tolerance and hardness of the aluminum films. Hardness measurements are simple and have the possibility of rough estimation of EM and SM tolerance. This method have the merit of saving time for life test.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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