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Evaluation of the Bonded Silicon-on-Insulator Wafer with Lifetime Measurement Using a Non-Contact Laser-Microwave Method

Published online by Cambridge University Press:  15 February 2011

Akira Usami ,
Yuji Yamaguchi ,
Masaya Ichimura ,
Shun-ichiro Ishigami ,
Kazunori Matsuki ,
Tsutomu Takeuchi  and
Takao Wada
Akira Usami
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan.
Yuji Yamaguchi
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan.
Masaya Ichimura
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan.
Shun-ichiro Ishigami
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan.
Kazunori Matsuki
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan.
Tsutomu Takeuchi
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan.
Takao Wada
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan.
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Abstract

In this study, we evaluated the electrical properties of the bonded silicon-on-insulator (SOI) wafers with lifetime measurements using a non-contact laser-microwave method. We prepared one group that consisted of bonded SOI wafers with different active layer thicknesses (I0,30,100μm) and another group consisting of bonded SOI wafers with different buried oxide layer thicknesses(0,0.01,0.1,0.75μm). Primary mode lifetime (τ1) was measured by the photoconductivity decay (PCP) method using the laser diode (λ= 774nm) as a carrier-injected light source. Steady-state change in the conductivity was measured by the photoconductivity modulation (PCM) method using a He-Ne laser (λ = 633nm) as a carrier-injected light source. τ1 decreases as the active layer thickness decreases. The PCM intensity also decreases with decreasing active layer thickness. Surface and interface recombination rates of the SOI are increased with decreasing layer thickness. The PCM intensity also decreases as the buried layer thickness decreases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 347: Symposium O – Microwave Processing of Materials IV , 1994 , 179
Copyright
Copyright © Materials Research Society 1994

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