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Evaluation of Dislocation Mobility in Wurtzite Semiconductors

Published online by Cambridge University Press:  04 February 2015

Ichiro Yonenaga
Ichiro Yonenaga*
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Abstract

The indentation hardness and yield strength of various wurtzite-structured semiconductors, such as AlN, GaN, InN, and ZnO, were summarized together with those of 6H-SiC. From analysis of the data, the activation energy for motion of an individual dislocation was deduced to be 2–2.7 and 0.7–1.2 eV in GaN and ZnO, respectively, and the evaluated activation energy for dislocation motion showed a dependence on the dislocation energy in the minimum length. The results were evaluated in terms of homology and the basic mechanism of the dislocation process. Dislocation motion is thought to be primarily controlled by the atomic bonding character of the semiconductors.

Keywords

dislocationsnitridestrength
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1741: Symposium AA – Synthesis, Processing and Mechanical Properties of Functional Hexagonal Materials , 2015 , mrsf14-1741-aa13-01
Copyright
Copyright © Materials Research Society 2015 

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References

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