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Evaluation of Damages and Pore-sealing Capabilities of Oxidizing and Reducing Etch Plasmas for Single and Dual Damascene Patterning of Porous Ultra-Low-k Materials

Published online by Cambridge University Press:  01 February 2011

Emmanuel Ollier ,
Mathieu Clain ,
Robert Fox ,
Philippe Brun  and
Stephane Jullian
Emmanuel Ollier
Affiliation:
[email protected], Philips Semiconductors, Crolles2Alliance, 860, rue Jean Monnet, Crolles, N/A, 38920, France, (33)4.38.92.21.08, (33)4.38.92.21.20
Mathieu Clain
Affiliation:
[email protected], Freescale Semiconductor, Crolles2Alliance, 870, rue Jean Monnet, Crolles, N/A, 38920, France
Robert Fox
Affiliation:
[email protected], Freescale Semiconductor, Crolles2Alliance, 870, rue Jean Monnet, Crolles, N/A, 38920, France
Philippe Brun
Affiliation:
[email protected], CEA - LETI, Crolles2Alliance, 17, rue des Martyrs, Grenoble, N/A, 38054, France
Stephane Jullian
Affiliation:
[email protected], Philips Semiconductors, Crolles2Alliance, 860, rue Jean Monnet, Crolles, N/A, 38920, France
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Abstract

This paper presents the evaluation of oxidizing and reducing plasmas for post etch pore-sealing treatments during patterning of interconnections in a porous Ultra Low-k (ULK) material. Morphological and chemical characterizations as well as electrical results (resistance, capacitance, leakage, yield) are presented for both single and dual-damascene integrations.

Keywords

microelectronicsdielectricelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F04-05
Copyright
Copyright © Materials Research Society 2006

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References

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