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Evaluation of crystal structure of porous Si nanowires prepared by metal assisted etching

Published online by Cambridge University Press:  21 May 2012

Takuya Yamaguchi
Affiliation:
Kansai University, Faculty of Engineering science, Yamate-cho 3-3-35, Suita, Osaka, 564-8680, Japan
Tomohiro Shimizu
Affiliation:
Kansai University, Faculty of Engineering science, Yamate-cho 3-3-35, Suita, Osaka, 564-8680, Japan
Chonge Wang
Affiliation:
Kansai University, Faculty of Engineering science, Yamate-cho 3-3-35, Suita, Osaka, 564-8680, Japan
Mitsuru Inada
Affiliation:
Kansai University, Faculty of Engineering science, Yamate-cho 3-3-35, Suita, Osaka, 564-8680, Japan
Shoso Shingubara
Affiliation:
Kansai University, Faculty of Engineering science, Yamate-cho 3-3-35, Suita, Osaka, 564-8680, Japan
Aleksandr Kuznetsov
Affiliation:
Institute for Nanoscale Physics and Chemistry (INPAC), Celestijnenlaan 200D, B-3001 Leuven
Johan Vanacken
Affiliation:
Institute for Nanoscale Physics and Chemistry (INPAC), Celestijnenlaan 200D, B-3001 Leuven
Victor Moshchalkov
Affiliation:
Institute for Nanoscale Physics and Chemistry (INPAC), Celestijnenlaan 200D, B-3001 Leuven
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Abstract

The macro and micro morphology of the Si surface, depending on noble metal ion concentration in etching solution, prepared by metal assisted etching were investigated. We defined the morphology of etched Si in four types, and developed the phase diagram of Si morphology. Mixture of silver nitrate (AgNO3) and hydrofluoric acid (HF) was used as an electroless-plating bath of Ag, as well as etching solution of Si. The morphology of the etched Si surface as function of concentration of AgNO3 in etching solution was observed by SEM. With increasing concentration of the AgNO3 in the etching solution, the surface of etched Si tended to be porous structure with very fine pores of a few nm (porous Si). When concentration of AgNO3is low, single crystal Si nanowires with a smooth surface without pores were observed.

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Articles
Copyright
Copyright © Materials Research Society 2012

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References

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