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Evaluation and Control of Plastic Deformation in GaAs Film on Si Substrate by Means of Crystal Plasticity Analysis

Published online by Cambridge University Press:  25 February 2011

Tetsuya Ohashi
Tetsuya Ohashi*
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., Hitachi, Omika 7–1–1, 319–12, Japan.
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Abstract

Dislocation accumulation in patterned gallium-arsenide film, which is deposited on silicon substrate and cooled down from the deposition to room temperature, is numerically simulated under a continuum mechanics approximation. A new approach to suppression of dislocation accumulation is proposed where selective growth of the film and partial doping of impurities into it are combined. The results show the possibility to keep the surface region of the film almost dislocation free.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 403
Copyright
Copyright © Materials Research Society 1993

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References

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