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Etching of SiO2 with CO2 and CO2 + Ar+ Lasers

Published online by Cambridge University Press:  28 February 2011

D. Pan ,
B. T. Dai ,
B. S. Agrawalla ,
K. Imen  and
S. D. Allen
D. Pan
Affiliation:
Center for Laser Studies, DRB 17, University of Southern California, Los Angeles, California 90089-1112
B. T. Dai
Affiliation:
Center for Laser Studies, DRB 17, University of Southern California, Los Angeles, California 90089-1112
B. S. Agrawalla
Affiliation:
Center for Laser Studies, DRB 17, University of Southern California, Los Angeles, California 90089-1112
K. Imen
Affiliation:
Center for Laser Studies, DRB 17, University of Southern California, Los Angeles, California 90089-1112
S. D. Allen
Affiliation:
Center for Laser Studies, DRB 17, University of Southern California, Los Angeles, California 90089-1112
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Abstract

Dry etching of fused SiO2 in the presence of several etchants using CO2 and CO2 + Ar+ lasers yields controlled, rapid removal rates of 10 Ao – 500 μm/sec and smooth, high quality surfaces. Etching occurs mainly by thermal ablation of SiO2 due to strong CO2 laser absorption. The addition of the Ar+ laser, which is absorbed by Br2 etchant to yield Br atoms, increases the etch rate as a result of a combination of photochemical and gas-phase heating effects.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 395
Copyright
Copyright © Materials Research Society 1987

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References

1. Agrawalla, B.S., Dai, B.T. and Allen, S.D., J. Vac. Sci. Technol. B (To be published).Google Scholar
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5. Imen, K., Pan, D., Dai, B.T., Agrawalla, B.S. and Allen, S.D., (unpublished results).Google Scholar