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The Etching of Silicon by Oxygen Observed by in situ Tem

Published online by Cambridge University Press:  16 February 2011

Frances M. Ross  and
J. Murray Gibson
Frances M. Ross
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We describe observations made in situ in a modified UHV transmission electron microscope of the process of etching of the Si (111) surface by oxygen. Etching occurs by the motion of individual bilayer steps across the surface and by analysing the step motion we discuss the etching mechanism in the context of macroscopic parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 219
Copyright
Copyright © Materials Research Society 1991

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References

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