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Etching and Charging Effects on Dose in Plasma Immersion Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Jiqun Shao ,
Eaton Corporation ,
Shu Qin ,
Zhuofan Zhao  and
Chung Chan
Jiqun Shao
Affiliation:
Semiconductor Equipment Division, 108 Cherry Hill Drive, Beverly, MA 01915
Eaton Corporation
Affiliation:
Semiconductor Equipment Division, 108 Cherry Hill Drive, Beverly, MA 01915
Shu Qin
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
Zhuofan Zhao
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
Chung Chan
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
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Abstract

A general relation between the implanted dose and the processing time for plasma immersion ion implantation (PHI) can be established through the dynamic sheath model. In practice, etching and charging effects have to be taken into account in PIII dose estimation.

Plasma immersion ion implantation (PII) has been tested in fabrication of semiconductor devices with shallow junctions and in hydrogénation of poly-Si thin film transistors (TFT). PIII doping is more suitable than conventional implantation for such applications because of its high dose rate at lower energy. Since the dose rate in PIII does not depend on the area being treated, the effective current will be higher if a larger implanted area is involved. However, the relation between dose and time is not always straightforward. During PIII processing possible etching and charging will affect the total accumulated doses. This paper presents a model for each which allows a proper compensation to be performed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 111
Copyright
Copyright © Materials Research Society 1995

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References

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