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Estimation of Emissivity of a Wafer in an RTP Chamber by a Dynamic Observer

Published online by Cambridge University Press:  10 February 2011

Sergey Belikov ,
David Hur ,
Bernard Friedl  and
N. M. Ravindra
Sergey Belikov
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
David Hur
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
Bernard Friedl
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
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Abstract

A method of estimation of wavelength-dependent emissivity of silicon wafers using thermocouple measurements is presented here. A dynamic observer and a persistent excitation of the lamps are required for convergence of the observer's estimates to the actual values of parameters for emissivity approximation. A TI designed RTP equipment and adaptive close-loop temperature control have been used to generate the required persistent excitation. Theory of emissivity estimation by this method has been developed and illustrated by experiment with this 3- zone RTP system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 335
Copyright
Copyright © Materials Research Society 1996

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References

1. Ravindra, N., Tong, F., Kosonocky, W., Markham, J., Liu, S. and Kinsella, K. in Rapid Thermal and Integrated Processing III (Mater. Res. Sos. Proc. 342, Pittsburgh, PA 1994), p. 431–436.Google Scholar
2. Belikov, S., Martynov, H., Kaplinsky, M. and Manikopoulos, C., IEEE Trans. Semicond. Manuf., 8, p. 360–362 (1995)Google Scholar
3. Belikov, S., Kaplinsky, M., Ravindra, N., Tong, F., Kosonocky, W., Markham, J. and Kinsella, K. in Proc. 3rd Int. RTP Conf., 1995, p. 269–276.Google Scholar
4. Belikov, S. and Friedland, B. in Proc. 34th IEEE Conf. Decision and Control., 1995, p. 2476–2481.Google Scholar
5. Friedland, B. in Proc. 12th IFAC Congress, 1993, Vol.5, p. 227–230.Google Scholar
6. Sato, T., Jpn. J. Appl. Phys. 6, p. 339–347 (1967).Google Scholar