Hostname: page-component-6bf8c574d5-r4mrb Total loading time: 0 Render date: 2025-03-09T23:35:51.693Z Has data issue: false hasContentIssue false
  • English
  • Français

Esr of Rare Earth Impurities (Dy3+, Er3+, Yb3+) in The Narrow Gap Semiconductor PbTE.

Published online by Cambridge University Press:  21 February 2011

A.M. Gennaro ,
G.B. Martins ,
C. Rettori ,
G.E. Barberis  and
C.Y. An
A.M. Gennaro
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas (SP), Brazil
G.B. Martins
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas (SP), Brazil
C. Rettori
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas (SP), Brazil
G.E. Barberis
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas (SP), Brazil
C.Y. An
Affiliation:
Instituto Nacional de Pesquisas Espaciais, INPE, CP 5125, 12201, São José dos Campos (SP), Brazil
Get access

Abstract

Electron Spin Resonance experiments of several diluted rare-earths (Dy3+, Er3+, Yb3+) in the narrow gap semiconductor PbTe show ground states appropriated with a cubic crystal field splitting of the lowest multiplet (J). The data permits the determination of the sign and ratio of the cubic crystal field parameters A4 <r4>and A6< r6 >. These results suggest that the rare-earths substitute the Pb2+ ions and that the crystal field is mainly associated to an octahedron of Te2− ions. The observed ESR spectra also show lower symmetry sites probably associated with nearest neighbor Pb2+ vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 213
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Low, W. and Rubins, R.S., Phys. Rev. 131, 2527 (1963).Google Scholar
2. Bierig, R.W. and Weber, M.J., Phys. Rev. 132, 164 (1963).Google Scholar
3. Descamps, D. and Merle, Y. Aubigne, D, Phys. Letters 8, 5 (1964).Google Scholar
4. Wasiela, A. and Merle, Y. Aubigne, D, Phys. Stat. Solidi (b) 47, 663 (1971).Google Scholar
5. Reynolds, R.W., Chen, Y., Boatner, L.A. and Abraham, M.M., Phys. Rev. Letters 29, 18 (1972).Google Scholar
6. Davidov, D., Orbach, R., Tao, L.J. and Chock, E.P., Phys. Letters 34A, 379 (1971).Google Scholar
7. Tao, L.J., Davidov, D., Orbach, R. and Chock, E.P., Phys. Rev. B4, 5 (1971).Google Scholar
8. Davidov, D., Orbach, R., Rettori, C., Tao, L.J. and Chock, E.P., Phys. Rev. Letters 28, 490 (1972).Google Scholar
9. Devine, R.A.B. and Zingg, W., Solid State Comm. 11, 233 (1972).Google Scholar
10. Rettori, C., Davidov, D., Dixon, A., Baberschke, K., Chock, E.P. and Orbach, R., Phys. Rev. B8, 3563 (1973).Google Scholar
11. Davidov, D., Bucher, E., Rupp, L.W. Jr, Longinotti, L. and Rettori, C., Phys. Rev. B9, 2879 (1974).Google Scholar
12. Davidov, D., Zevin, V., Bloch, J.M. and Rettori, C., Solid State. Comm. 17, 1279 (1975).Google Scholar
13. Levin, R., Davidov, D., Rettori, C., Suassuna, J.F. and Shaltiel, D., J. Phys. F:Metal Phys. 7, 703 (1977).Google Scholar
14. Barberis, G.E., Davidov, D., Donoso, J.P., Gandra, F.G., Rettori, C. and Suassuna, J.F., Solid State Comm. 28, 427 (1978).Google Scholar
15. Bloch, J.M., Davidov, D. and Rettori, C., J. Mag. Mag. Materials 25, 271 (1982).Google Scholar
16. Barnes, S.E., Adv. Phys. 30, 801 (1981).Google Scholar
17. Kingsley, J.D. and Aven, M., Phys. Rev. 155. 235 (1967).Google Scholar
18. Kasatkin, V.A., Masterov, V.F., Romanov, V.V., Samorukov, B.E. and makh, K.F. Shtel, Sov. Phys. Semicond. 16, 106 (1982).Google Scholar
19. Masterov, V.F., makh, K.F. Shtel and Zakharenkov, L.F., Sov. Phys. Semicond. 21, 223 (1987).Google Scholar
20. Baeumler, M., Schneider, J., Kohl, F. and Tomzig, E., J. Phys. C. Solid State Phys. 20, L963 (1987).Google Scholar
21. Klein, P.B., Moore, F.G. and Dietrich, H.B., Appl. Phys. Letters 58. 502 (1991).Google Scholar
22. Lovett, D.R., in “Semimetals and narrow gap semiconductors” (Pion Ltd., London, 1977).Google Scholar
23. Diluted Magnetic (Semimagnetic) Semiconductors. Aggarwal, R.L., Furdyna, J.K. and Molnar, S. von. MRS Symposia Proceed. 89, (1987).Google Scholar
24. Bartkowski, M., Northcott, D.J., Park, J.M. and Reddoch, A.H., Solid State Comm. 56, 659 (1985).Google Scholar
25. Parada, J. and Pratt, G.W. jr., Phys. Rev. Lett. 22, 180 (1969).Google Scholar
26. Semiconductors and Semimetals. Willardson and Beer 5, Harman, T.C..Google Scholar
27. Allgaier, R.S. and Scanlon, W.W., Phys. Rev. 111, 1029 (1958).Google Scholar
28. Dyson, F.J., Phys. Rev. 98, 349 (1955).Google Scholar
29. Belorizky, E., Ayant, Y., Descamps, D. and Merle, Y. Aubigne, D, J. de Physique 27, 313 (1966).Google Scholar
30. Devine, R.A.B. and Moret, J.M., Phys. Letters 41A, 11, (1972).Google Scholar
31. Zevin, V., Shaltiel, D. and Zingg, W., Phys. Rev. B16, 1902 (1977).Google Scholar
32. Lea, K.R., Leask, M.J.M and Wolf, W.P., J. Phys. Chem. Solids 23, 138 (1962).Google Scholar
33. Freeman, A. J. and Watson, R.E., Phys. Rev. 127, 2058 (1962)Google Scholar