Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T07:43:19.148Z Has data issue: false hasContentIssue false
  • English
  • Français

Erbium-Doped A-Si:H Films Fabricated by Standard Pecvd Using Metalorganics

Published online by Cambridge University Press:  10 February 2011

N.A. Feoktistov ,
V.G. Golubev ,
A.V. Medvedev  and
A.B. Pevtsov
N.A. Feoktistov
Affiliation:
Joffe Physico-Teclmical Institute, St.-Petersburg 194021, Russia
V.G. Golubev
Affiliation:
Joffe Physico-Teclmical Institute, St.-Petersburg 194021, Russia
A.V. Medvedev
Affiliation:
Joffe Physico-Teclmical Institute, St.-Petersburg 194021, Russia
A.B. Pevtsov
Affiliation:
Joffe Physico-Teclmical Institute, St.-Petersburg 194021, Russia, [email protected]
Get access

Abstract

1·54 jim light-emitting erbium-doped hydrogenated amorphous silicon films have been fabricated by standard low temperature (200 – 250 °C) PE CVD technique. The films were doped with erbium during the deposition by making use of a new fluorine-containing metalorganic compound Er(HFA)3*DME [where HFA=CF3C(O)CHC(O)CF3, DME=CH3OCH2CH2OCH3]. Photoluminescence spectra of the a-Si(Er):H films were studied within the range 0·6–1·7 pm at both 77 K and 295 K. A photoconductivity was also detected. The photo- to dark conductivity ratio was on the order of 103.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 255
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Bresler, M.S., Gusev, O.V., Kudoyarova, V.Kh., Kuznetsov, A.N., Pak, P.E., Terukov, E.I., Yassievich, I.N.. Zakharchenya, B.P., Fuhs, W., Sturm, A., Appl. Phys. Lett. 67, 3599 (1995).Google Scholar
2 Terukov, E.I., Kudoyarova, V.Kh., Mezdrogina, M.M., Golubev, V.G., Sturm, A., Fuhs, W., Fiz. Tekh. Poluprovodn. 30, 820 (1996) [Semiconductors 30, 440 (1996).Google Scholar
3 Shin, J.H., Serna, R., Hoven, G.N., Polman, A., Sark, W.G.J.M., Vredenberg, A.M., Appl. Phys. Lett. 68, 997 (1996).Google Scholar
4 Zanatta, A.R., Nunes, L.A.O., Appl. Phys. Lett. 70, 511 (1997).Google Scholar
5 Rogers, J.L., Andry, P.S., Varhue, W.J., Adams, E., Lavoie, M., Klein, P.B., J. Appl. Phys. 78, 6241 (1995).Google Scholar
6 Andry, P.S., Varhue, W.J., Lapido, F., Ahmed, K., Klein, P.B., Hengenhold, P., Hunter, J., J. Appl. Phys. 80, 551 (1996).Google Scholar
7 The Physics of Hydrogenated Amorphous Silicon I, edited by Joannnopoulos, J., Lucovsky, G., (Springer, Berlin, Heidelberg, New York, Tokyo, 1984).Google Scholar
8 Voronkov, V.B., Golubev, V.G., Gorshkov, N.i., Medvedev, A.V., Pevtsov, A.B., Suglobov, D.N., Feoktistov, N.A., Pis‘ma Zh. Tekh. Fiz. 13(1998) [Tech. Phys. Lett, 13(1998) in press.Google Scholar
9 Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, A., Xie, Y.H., Poate, J.M., Kimerling, L.C., J. Appl. Phys. 70, 2672 (1991).Google Scholar
10 Ni, W.X., Joelsson, K.B., Du, C.X., Buyanova, I.A., Pozina, G., Chen, W.M., Hansson, G.V., Monemar, B., Cardenas, J., Svensson, B.G., Appl. Phys. Lett. 70, 3383 (1997).Google Scholar
11 Grebenshchikov, N. R., Sidorenko, G. V., Suglobov, D. N., Radiokhimiya 32, 14 (1990) in Russian.Google Scholar
12 Gorshkov, N. I., Sidorenko, G. V., Suglobov, D. N., Radiokhimiya 37, 196 (1995) [Radiochemistry 37, 180 (1995)].Google Scholar
13 Street, R., Adv. in Physics 30, 593 (1981).Google Scholar