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Erbium Implantation in Silicon: A Way Towards Si-Based Optoelectronics

Published online by Cambridge University Press:  22 February 2011

F. Priolo ,
G. Franzó ,
S. Coffa ,
A. Polman ,
V. Bellani ,
A. Carnera  and
C. Spinella
F. Priolo
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57, I-95129 Catania (Italy)
G. Franzó
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57, I-95129 Catania (Italy)
S. Coffa
Affiliation:
CORIMME, Stradale Primosole 50, I-95100 Catania (Italy)
A. Polman
Affiliation:
FOM-Institute AMOLF, Kruislaan 407, 1098 SJ Amsterdam (The Netherlands)
V. Bellani
Affiliation:
Dipartimento di Fisica, Universitá di Pavia, Via Bassi 6, I-27100 Pavia (Italy)
A. Carnera
Affiliation:
Dipartimento di Fisica, Universitá di Padova, Via F. Marzolo 8, I-35131 Padova (Italy)
C. Spinella
Affiliation:
IMETEM - CNR, Stradale Primosole 50, I-95100 Catania (Italy)
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Abstract

In this paper our recent work on erbium implantation for optical doping of silicon is reviewed. It is shown that O co-implantation plays a key role both in providing Er with the appropriate chemical surrounding and in allowing the incorporation of high Er concentrations in thick Si layers without the formation of twins and/or precipitates. The luminescence intensity in Er and O co-implanted samples shows a much weaker temperature dependence (a decrease by a factor of 30 from 77K to 300K) than in samples without O (a decrease by 3 orders of magnitude in the same temperature range). This allowed us to observe room temperature photo- and electro-luminescence in Er and O co-doped samples. The temperature dependence of the luminescence in these samples has been determined to be due to non-radiative de-excitation processes. These data are reported and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 397
Copyright
Copyright © Materials Research Society 1994

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References

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