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Er3+-Doped Silicon Prepared by Laser Doping

Published online by Cambridge University Press:  21 February 2011

T. Asatsuma ,
P. Dodd ,
J. F. Donegan ,
J. G. Lunney  and
J. Hegarty
P. Dodd
Affiliation:
Department of Pure and Applied Physics, Trinity College, Dublin 2, Ireland
J. F. Donegan
Affiliation:
Department of Pure and Applied Physics, Trinity College, Dublin 2, Ireland
J. G. Lunney
Affiliation:
Department of Pure and Applied Physics, Trinity College, Dublin 2, Ireland
J. Hegarty
Affiliation:
Department of Pure and Applied Physics, Trinity College, Dublin 2, Ireland
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Abstract

We have carried out an investigation of the laser doping of Si with rare-earth ions. In this technique a silicon surface coated with a thin layer of the rare-earth metal is melted with a pulsed laser, the dopant is mixed in the molten layer, and incorporated in the crystal during regrowth. Er was chosen for the main part of our work as it is the best characterized of the rare-earth ions in Si. Luminescence is observed around 1.54µm and is assigned to optical transitions on Er3+ ions. This preliminary study shows that this new technique is viable for the production of optically active Er3+ in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 67
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Petrov, V.V., Prosolovich, V.S., Tkachev, V.D., Karpov, Yu A., and Millvidskii, M.G., Phys.Stat.Sol. a88, K141, (1985).Google Scholar
[2] Takahei, K., Ouyo Butsuri, 60, 120, (1991) and references therein.Google Scholar
[3] Aszodi, G., Weber, J., Uihlein, Ch., Pu-lin, L., Ennen, H., Kaufmann, U., Schneider, J., and Windscheif, J., Phys.Rev. B31, 7767, (1985).Google Scholar
[4] Wagner, J., Ennen, H., and Miiller, H.D., J.Appl.Phys. 59, 1202,(1986).Google Scholar
[5] Miiller, H.D., Ennen, H., Schneider, J., and Axmann, A., J.Appl.Phys. 59, 2210 (1986).Google Scholar
[6] Donegan, J.F., Phys.Rev. B41, 10254, (1990).Google Scholar
[7] Ennen, H., Pomernke, G., Axmann, A., Eisele, K., Haydl, W., and Schneider, J., Appl.Phys.Lett. 46, 381 (1985).Google Scholar
[8] Thonke, K., Hermann, H.U., and Schneider, J., J.Phys.C 21, 5881, (1988).Google Scholar
[9] Nakagome, H., Uwai, K., and Takahei, K., Appl.Phys.Lett. 53, 1726, (1988).Google Scholar
[10] Tang, Y.S., Heasman, K.C., Gillin, W.P., and Sealy, B.J., Appl.Phys.Lett. 55, 432, (1989).Google Scholar
[11] Galtier, P., Pocholle, J.P., Charasse, M.N., Cremoux, B.de, Hirtz, J.P., Groussin, B., Benyattou, T., and Guillot, G., Appl. Phys.Lett. 55, 2105 (1989).Google Scholar
[12] Favennec, P.N., Haridon, H.L', Moutonnet, D., Salvi, M., and Gauneau, M., Jpn.J.Appl.Phys., 29, L524, (1990).Google Scholar
[13] Benton, J.L., Michel, J., Kimerling, L.C., Jacobson, D.C., Xie, Y.-H., Eaglesham, D.J., Fitzgerald, E.A., and Poate, J.M., J.Appl.Phys. 70, 2667, (1991).Google Scholar
[14] Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.-H., Poate, J.M., and Kimerling, L.C., J.Appl.Phys. 70, 2672, (1991).Google Scholar
[15] Eaglesham, D.J., Michel, J., Fitzgerald, E.A., Jacobson, D.C., Poate, J.M., Benton, J.L., Polman, A., Xie, Y.-H., and Kimerling, L.C., Appl.Phys.Lett. 58, 2797, (1991).Google Scholar
[16] White, C. W. in Pulsed Laser Processing of Semiconductors, Semiconductors and Semimetals Vol. 23, Academic Press, (1984), Chapter 2.Google Scholar
[17] Sugiano, K. and Toyoda, K., Appl.Phys. Lett. 61, 2817, (1992).Google Scholar
[18] Lowndes, D.H., and Jellison, G.E. in Pulsed Laser Processing of Semiconductors, Semiconductors and Semimetals Vol. 23, Academic Press, (1984), Chapter 6.Google Scholar
[19] Solis, J., and Afonso, C. N., J. Appl. Phys., 69, 4, (1991).Google Scholar
[20] Jellison, G.E., Lowndes, D.H, Mashburn, D.N., and Wood, R. F., Phys. Rev. B34, 2407, (1986).Google Scholar
[21] Davies, G., Phys.Reports 176, 83, (1989).Google Scholar
[22] Wagner, J., Dörnen, A. and Sauer, R., Mat. Res. Soc. Symp. Proc. Vol. 46, 453, (Materials Research Society, Pittsburgh) 1985.Google Scholar
[23] Polman, A., Custer, J.S., Snoeks, E. and Hoven, G.N. van den, Appl. Phys. Lett. 62, 507, (1993).Google Scholar
[24] Jackson, K.A., Gilmer, G.H., and Leamy, H.J., in Laser and Electron Beam Processing of Materials edited by White, C.W. and Peercy, P.S., Academic Press (1980), p. 104.Google Scholar
[25] Aziz, M.J., J. Appl. Phys. 53, 1158, (1982).Google Scholar
[26] Aziz, M.J. and White, C.W., Phys. Rev. Lett. 57, 2675, (1986).Google Scholar