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Equilibration Kinetics in Interstitially Doped a-Si:H

Published online by Cambridge University Press:  25 February 2011

K. Winer  and
R. A. Street
K. Winer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
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Abstract

The time dependence of the dc conductivity of Li- and Be-doped a-Si:H after thermal quenching is reported. The equilibration kinetics, similar to that observed in substitutionally-doped a-Si:H, is characterized by stretched exponential decays and activated time constants. The equilibration times for Bedoped a-Si:H were too short (< 1 min) for the kinetics of equilibration to be accurately measured. In Li-doped a-Si:H, the equilibration time constants were longer than those in 1% P-doped a-Si:H, which is due to the smaller carrier concentrations in the Li-doped a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 137
Copyright
Copyright © Materials Research Society 1989

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References

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