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EPR and emission study of silicon suboxide nanopillars

Published online by Cambridge University Press:  19 November 2013

V. Bratus’ ,
I. Indutnyi ,
P. Shepeliavyi  and
T. Torchynska
V. Bratus’
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv 03680, Ukraine
I. Indutnyi
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv 03680, Ukraine
P. Shepeliavyi
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv 03680, Ukraine
T. Torchynska
Affiliation:
ESFM-Instituto Politécnico Nacional, México D.F. 07738, Mexico
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Abstract

The results of correlated electron paramagnetic resonance (EPR) and photoluminescence (PL) study of obliquely deposited porous SiOx films after step-by-step 15 min annealing within 105 min in vacuum at 950°C are presented. The low intensity symmetrical and featureless EPR line with a g-value g=2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds (DB) of silicon atoms in amorphous SiOx domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense EPR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over four non-bridging oxygen atoms grouped around a Si vacancy in SiO2. The impact of chemical treatment before annealing and duration of anneals on the defect system, and a correlation of the PL intensity with decreasing of the DB EPR signal are discussed.

Keywords

LuminescenceSiEPR
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 51 - 56
Copyright
Copyright © Materials Research Society 2013 

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References

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