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Epitaxy of YBa2Cu3O7-xon Silicon on Sapphire: Possibilities and Limits

Published online by Cambridge University Press:  15 February 2011

C. A. Copetti ,
F. Wang ,
J. Schubert ,
H. Schulz ,
W. Zander  and
Ch. Buchal
C. A. Copetti
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jüllich (KFA), D-52425 Jülich, Germany
F. Wang
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jüllich (KFA), D-52425 Jülich, Germany
J. Schubert
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jüllich (KFA), D-52425 Jülich, Germany
H. Schulz
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jüllich (KFA), D-52425 Jülich, Germany
W. Zander
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jüllich (KFA), D-52425 Jülich, Germany
Ch. Buchal
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jüllich (KFA), D-52425 Jülich, Germany
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Abstract

We present investigations of YBa2Cu3O7-x, thin films deposited on Silicon on Sapphire (SoS) substrates by pulsed laser deposition and dc sputtering. A compound buffer system consisting of YSZ and CeO2 is used for improved YBa2Cu3O7-x growth characteristics. The critical thickness of YBa2Cu3O7-x on CeO2/YSZ/SoS is determined to be 280 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 171
Copyright
Copyright © Materials Research Society 1994

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